LE24C082M

No.0684-3/11

Specifications

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Ratings

Unit

Supply voltage

-0.5 to +6.5

V

DC input voltage

-0.5 to +5.5

V

Over-shoot voltage

Below 20ns

-1.0 to +6.5

V

Storage temperature

Tstg

-65 to +150

°C

Note: If an electrical stress exceeding the maximum rating is applied, the device may be damaged.

Operating Conditions

Parameter

Symbol

Conditions

Ratings

Unit

Operating supply voltage

2.7 to 5.5

V

Operating temperature

-40 to +85

°C

DC Electrical Characteristics

VDD=2.7V to 5.5V

Parameter

Symbol

Conditions

min

typ

max

Unit

Supply current at reading

ICC1

f=400kHz

0.5

mA

Supply current at writing

ICC2

f=400kHz, tWC=10ms

3

mA

Standby current

ISB

VIN=VDD or GND

2

μA

Input leakage current

ILI

VIN=GND to VDD

-2.0

+2.0

μA

Output leakage current (SDA)

ILO

VOUT=GND to VDD

-2.0

+2.0

μA

Input low voltage

VIL

VDD*0.2

V

Input low voltage (CMOS)

VILC

0.2

V

Input high voltage

VIH

VDD*0.8

V

Input high voltage (CMOS)

VIHC

VDD-0.2

V

IOL=0.2mA

0.2

V

Output low voltage

VOL

IOL=1.0mA

0.4

V

Capacitance/Ta=25

°C, f=1MHz

Parameter

Symbol

Conditions

max

Unit

In/Output pin capacitance

CI/O

VI/O=0V (SDA)

10

pF

Input pin capacitance

CI

VIN=0V (other than SDA)

10

pF

Note: This parameter is sampled and not 100% tested.

AC Electric Characteristics

Input pulse level

0.1

×VDD to 0.9×VDD

Input pulse rise / fall time

20ns

Output detection voltage

0.5

×VDD

Output load

50pF+Pull up resistor 3.0k

Ω

Output Load Circuit

R=3.0k

Ω

SDA

VDD

C=50pF