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DG9409 Datasheet(PDF) 6 Page - Vishay Siliconix |
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DG9409 Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 16 page www.vishay.com 6 Document Number: 71870 S11-1229-Rev. C, 20-Jun-11 Vishay Siliconix DG9408, DG9409 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. RDON = RDON Max - RDON Min. h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin. i. RDON flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (Single Supply 3 V) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, ± 10 % , V- = 0 V VEN = 0.4 V or 1.8 V f Temp.b Limits - 40 °C to 85 °C Unit Min.c Typ.d Max.c Analog Switch Analog Signal Rangee VANALOG Full 0 3 V On-Resistance RON V+ = 2.7 V, VD = 0.5 V or 2.2 V, IS = 5 mA Room Full 12 25.5 26.5 RON Match Between Channelsg RON V+ = 2.7 V, VD = 0.5 V or 2.2 V, IS = 5 mA Room 3.6 On- Resistance Flatnessi RON Flatness Room 13 Switch Off Leakage Currenta IS(off) V+ = 3.3 V VS = 2 V or 1 V, VD = 1 or 2 V Room Full - 2 - 15 2 15 nA ID(off) Room Full - 2 - 15 2 15 Channel On Leakage Currenta ID(on) V+ = 3.3 V VD = VS = 1 V or 2 V, sequence each switch on Room Full - 2 - 15 2 15 Digital Control Logic High Input Voltage VINH Full 1.8 V Logic Low Input Voltage VINL Full 0.4 Input Currenta IIN VAX = VEN = 1.8 V or 0.4 V Full - 1 1 µA Dynamic Characteristics Transition Time tTRANS VS1 = 1.5 V, VS8 = 0 V, (DG9408) VS1b = 1.5 V, VS4b = 0 V, (DG9409) see fig. 2 Room Full 140 165 182 ns Break-Before-Make Time tBBM VS(all) = VDA = 1.5 V see fig. 4 Room Full 263 Enable Turn-On Time tON(EN) VAX = 0 V, VS1 = 1.5 V (DG9408) VAX = 0 V, VS1b = 1.5 V (DG9409) see fig. 3 Room Full 140 162 178 Enable Turn-Off Time tOFF(EN) Room Full 76 97 104 Charge Injectione Q CL = 1 nF, RGEN = 0 , VGEN = 0 V Room 7 pC Off Isolatione, h OIRR f = 100 kHz, RL = 1 k Room - 81 dB Crosstalke XTALK Room - 85 Source Off Capacitancee CS(off) f = 1 MHz, VS = 0 V, VEN = 1.8 V DG9408 Room 23 pF DG9409 Room 25 Drain Off Capacitancee CD(off) f = 1 MHz, VD = 0 V, VEN = 1.8 V DG9408 Room 230 DG9409 Room 120 Drain On Capacitancee CD(on) f = 1 MHz, VD = 0 V, VEN = 0 V DG9408 Room 256 DG9409 Room 147 Power Supplies Power Supply Current I+ VEN = VA = 0 V or V+ Room 1 µA |
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