Document Number: 88904

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Revision: 15-Mar-11

3

This datasheet is subject to change without notice.

EGF1T

Vishay General Semiconductor

New Product

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance Per Leg

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.01

0.1

1

10

100

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Instantaneous Forward Voltage (V)

T

T

T

0.001

0.01

0.1

1

10

100

10

20

30

40

50

60

70

80

90

100

T

T

T

Percent of Rated Peak Reverse Voltage (%)

1

10

100

0.1

1

10

100

Reverse Voltage (V)

1

10

100

0.1

1

10

100

t - Pulse Duration (s)

0.167 (4.24)

0.187 (4.75)

0.0065 (0.17)

0.015 (0.38)

0.030 (0.76)

0.060 (1.52)

0.196 (4.98)

0.226 (5.74)

0.094 (2.39)

0.114 (2.90)

0.100 (2.54)

0.118 (3.00)

0.040 (1.02)

0.066 (1.68)

0.098 (2.49)

0.108 (2.74)

0.006 (0.152) TYP.

DO-214BA (GF1)

0.076 (1.93)

MAX.

0.220 (5.58)

REF.

0.060 (1.52)

MIN.

Mounting Pad Layout

Cathode Band

0.066 (1.68)

MIN.