Electronic Components Datasheet Search |
|
2SD1883 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
2SD1883 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1883 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8 A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A;IB=0.8 A 1.5 V VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 800 V IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 10 μA ICES Collector cut-off current VCE=1500V; RBE=0 1.0 mA hFE-1 DC current gain IC=0.5 A ; VCE=5V 8 hFE-2 DC current gain IC=2.5A ; VCE=5V 3.5 7 tf Fall time IC=3A;RL=66.7Ω; IB1=0.8A IB2=-1.6A;VCC=200V 0.1 0.3 μs |
Similar Part No. - 2SD1883 |
|
Similar Description - 2SD1883 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |