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2SD2493 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2493 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Darlington Power Transistors 2SD2493 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 110 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=5mA 2.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=5mA 3.0 V ICBO Collector cut-off current VCB=110V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=4V 5000 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 55 pF fT Transition frequency IC=2A ; VCE=12V 60 MHz Switching times ton Turn-on time 0.8 μs ts Storage time 6.2 μs tf Fall time IC=5A;RL=6Ω IB1=- IB2=5mA VCC=30V 1.1 μs hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 |
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