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BD540B Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BD540B
Description  isc Silicon PNP Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD540B Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD540B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -30mA; IB= 0
-80
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -1A; IB= -0.125A
B
-0.25
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.375A
B
-0.8
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= -5A; IB= -1A
B
-1.5
V
VBE(on)
Base-Emitter On Voltage
IC= -3A; VCE= -4V
-1.25
V
ICEO
Collector Cutoff Current
VCB= -60V; IB= 0
B
-0.3
mA
ICES
Collector Cutoff Current
VCE= -80V; VBE= 0
-0.2
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1.0
mA
hFE-1
DC Current Gain
IC= -0.5A; VCE= -4V
40
hFE-2
DC Current Gain
IC= -1A; VCE= -4V
30
hFE-3
DC Current Gain
IC= -3A; VCE= -4V
12
isc Website：www.iscsemi.cn
2


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