Document Number: 89273

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Revision: 19-Apr-11

3

This document is subject to change without notice.

ES1A thru ES1D

Vishay General Semiconductor

New Product

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

T

T

T

T

100

10

1

0.1

0.01

Instantaneous Forward Voltage (V)

0.2

0.4

0.6

0.8

1.0

1.2

1.4

T

T

T

T

Percent of Rated Peak Reverse Voltage (%)

0

20406080

100

1000

100

10

1

0.1

f = 1.0 MHz

Reverse Voltage (V)

14

12

10

8

6

4

2

0

0.1

1

10

100

Mounted on 0.2" x 0.2" (5 mm x 7 mm)

Copper Pad Areas

100

10

1

0.1

1

10

100

t - Pulse Duration (s)

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

0.030 (0.76)

0.060 (1.52)