Document Number: 84648

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Revision: 21-Jul-09

3

ESH3B, ESH3C & ESH3D

Vishay General Semiconductor

New Product

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.2

0.4

0.6

0.8

1.0

1.2

100

10

1

0.1

0.01

Instantaneous Forward Voltage (V)

T

T

T

T

020

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

1000

100

10

1

0.1

0.01

T

T

T

T

Reverse Voltage (V)

0.1

1

10

100

1000

100

10

1

100

10

1

0.01

0.1

1

10

100

t - Pulse Duration (s)

Cathode Band

DO-214AB (SMC)

0.126 (3.20)

0.114 (2.90)

0.246 (6.22)

0.220 (5.59)

0.280 (7.11)

0.260 (6.60)

0.012 (0.305)

0.006 (0.152)

0.008 (0.2)

0 (0)

0.320 (8.13)

0.305 (7.75)

0.060 (1.52)

0.030 (0.76)

0.103 (2.62)

0.079 (2.06)

Mounting Pad Layout

0.126 (3.20) MIN.

0.060 (1.52) MIN.

0.185 (4.69) MAX.

0.320 REF.