Document Number: 93573

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Revision: 21-Apr-11

1

This document is subject to change without notice.

VS-ETH1506S-M3, VS-ETH1506-1-M3

Vishay Semiconductors

New Product

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Compliant to RoHS Directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21

definition

• Designed and qualified according to JEDEC-JESD47

DESCRIPTION/APPLICATIONS

Hyperfast recovery rectifiers designed with optimized

performance of forward voltage drop, hyperfast recovery

time, and soft recovery.

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

These devices are intended for use in PFC Boost stage in

the AC/DC section of SMPS, inverters or as freewheeling

diodes.

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

PRODUCT SUMMARY

Package

15 A

600 V

2.45 V

21 ns

175 °C

Diode variation

Single die

VS-ETH1506S-M3

VS-ETH1506-1-M3

TO-262

N/C

Anode

1

3

2

Anode

1

3

Base

cathode

2

N/C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Repetitive peak reverse voltage

600

V

Average rectified forward current

15

A

Non-repetitive peak surge current

160

Operating junction and storage

temperatures

- 65 to 175

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

600

-

-

V

Forward voltage

-

1.8

2.45

-

1.25

1.6

Reverse leakage current

-

0.01

15

μA

-

20

200

Junction capacitance

-

12

-

pF

Series inductance

Measured lead to lead 5 mm from package body

-

8.0

-

nH