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BD750A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD750A
Description  isc Silicon PNP Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD750A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BD750/750A
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -90V(Min)- BD750
= -120V(Min)- BD750A
·High Power Dissipation
·Complement to Type BD751/751A
APPLICATIONS
·Designed for high voltage and high power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD750
-100
VCEV
Collector-Emitter Voltage
BD750A
-130
V
BD750
-90
VCEO(SUS)
Collector-Emitter Voltage
BD750A
-120
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-20
A
IB
B
Base Current-Continuous
-5
A
PC
Collector Power Dissipation@TC=25℃
200
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃/W
isc Website：www.iscsemi.cn


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