BD895 datasheet(1/3 Pages) ISC

Part #	BD895

Description	Silicon NPN Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD895/897/899/901

DESCRIPTION

・With TO-220C package

・Complement to type BD896/898/900/902

・DARLINGTON

APPLICATIONS

・For use in output stages in audio

equipment ,general amplifier,and

analogue switching applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD895

45

BD897

60

BD899

80

VCBO

Collector-base voltage

BD901

Open emitter

100

V

BD895

45

BD897

60

BD899

80

VCEO

Collector-emitter voltage

BD901

Open base

100

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current-DC

8

A

IB

Base current

300

mA

TC=25℃

70

PT

Total power dissipation

Ta=25℃

2

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

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