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BD898 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD898 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors BD896/898/900/902 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD896 -45 BD898 -60 BD900 -80 V(BR)CEO Collector-emitter breakdown voltage BD902 IC=-100mA, IB=0 -100 V VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-12mA -2.5 V VBE Base-emitter on voltage IC=-3A ; VCE=-3V -2.5 V BD896 VCB=-45V, IE=0 TC=100℃ -0.2 -2.0 BD898 VCB=-60V, IE=0 TC=100℃ -0.2 -2.0 BD900 VCB=-80V, IE=0 TC=100℃ -0.2 -2.0 ICBO Collector cut-off current BD902 VCB=-100V, IE=0 TC=100℃ -0.2 -2.0 mA BD896 VCE=-30V, IB=0 BD898 VCE=-30V, IB=0 BD900 VCE=-40V, IB=0 ICEO Collector cut-off current BD902 VCE=-50V, IB=0 -0.5 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2 mA hFE DC current gain IC=-3A ; VCE=-3V 750 VEC Diode forward voltage IE=-8A -3.5 V ton Turn-on time 1 μs toff Turn-off time IC=-3A ; IB1=-IB2=-12mA VBE=3.5V;RL=10Ω;tp=20μs 5 μs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.79 ℃/W |
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