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FA38SA50LCP Datasheet(PDF) 4 Page - Vishay Siliconix |
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FA38SA50LCP Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94547 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 11-May-10 FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A Fig. 7 - Typical Source Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Basic Gate Charge Waveform Fig. 10 - Gate Charge Test Circuit Fig. 11 - Switching Time Test Circuit Fig. 12 - Switching Time Waveforms 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 150 C J ° 1 10 100 1000 1 10 100 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C ° ° J C V , Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms QG QGS QGD VG Charge 10V D.U.T. V DS I D I G 3 mA V GS .3 µF 50 K Ω .2 µF 12 V Current regulator Same type as D.U.T. Current sampling resistors + - Pulse width ≤ 1 µs Duty factor ≤ 0.1 % D.U.T. 10 V + - V DS R D V DD R G V GS VDS 90% 0% GS td(on) tr td(off) tf |
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