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BDT65 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDT65 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65/A/B/C DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT65 60 BDT65A 80 BDT65B 100 VCER Collector-Emitter Voltage BDT65C 120 V BDT65 60 BDT65A 80 BDT65B 100 VCEO Collector-Emitter Voltage BDT65C 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A IB B Base Current-Continuous 0.5 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1 ℃/W isc Website：www.iscsemi.cn |
Similar Part No. - BDT65 |
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Similar Description - BDT65 |
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