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24NM60N Datasheet(PDF) 5 Page - STMicroelectronics |
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24NM60N Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 14 page STL24NM60N Electrical characteristics Doc ID 18363 Rev 2 5/14 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 16 64 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 16 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 16 A, di/dt = 100 A/µs VDD = 100 V (see Figure 4) - 340 4.6 27 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 16 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 4) - 4.4 5.7 28 ns µC A |
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