24NM60N datasheet(5/14 Pages) STMICROELECTRONICS

Part #	24NM60N

Description	N-channel 600 V, 0.200 廓, 16 A PowerFLAT??8x8 HV MDmesh??II Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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5 / 14 page

STL24NM60N

Electrical characteristics

Doc ID 18363 Rev 2

5/14

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-

16

64

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 16 A, VGS = 0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 16 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 4)

-

340

4.6

27

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 16 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see

Figure 4)

-

4.4

5.7

28

ns

µC

A

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