GA100TS60SFPBF datasheet(1/7 Pages) VISHAY

Part #	GA100TS60SFPBF

Description	"Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 100 A

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 94544

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Revision: 04-May-10

1

"Half-Bridge" IGBT INT-A-PAK

(Standard Speed IGBT), 100 A

GA100TS60SFPbF

Vishay High Power Products

FEATURES

• Standard speed PT IGBT technology

• Standard speed: DC to 1 kHz, optimized for

hard switching speed

•FRED Pt® antiparallel diodes with fast recovery

• Very low conduction losses

•Al2O3 DBC

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed for industrial level

BENEFITS

• Optimized for high current inverter stages (AC TIG welding

machines)

• Direct mounting to heatsink

• Very low junction to case thermal resistance

•Low EMI

PRODUCT SUMMARY

VCES

600 V

IC DC

220 A

VCE(on) at 100 A, 25 °C

1.11 V

INT-A-PAK

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Collector to emitter voltage

VCES

600

V

Continuous collector current

IC

TC = 25 °C

220

A

TC = 130 °C

100

Pulsed collector current

ICM

440

Peak switching current

ILM

440

Gate to emitter voltage

VGE

± 20

V

RMS isolation voltage

VISOL

Any terminal to case, t = 1 min

2500

Maximum power dissipation

PD

TC = 25 °C

780

W

TC = 100 °C

312

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Collector to emitter breakdown voltage

VBR(CES)

VGE = 0 V, IC = 1 mA

600

-

V

Collector to emitter voltage

VCE(on)

VGE = 15 V, IC = 100 A

-

1.11

1.28

IC = 200 A

-

1.39

-

VGE = 15 V, IC = 100 A, TJ = 125 °C

-

1.08

1.22

Gate threshold voltage

VGE(th)

IC = 0.25 mA

3

-

6

Collector to emitter leakage current

ICES

VGE = 0 V, VCE = 600 V

-

1

mA

VGE = 0 V, VCE = 600 V, TJ = 125 °C

-

10

Diode forward voltage drop

VFM

IC = 100 A, VGE = 0 V

-

1.44

1.96

V

IC = 100 A, VGE = 0 V, TJ = 125 °C

-

1.25

1.54

Gate to emitter leakage current

IGES

VGE = ± 20 V

-

± 250

nA

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