GA300TD60S datasheet(2/8 Pages) VISHAY

Part #	GA300TD60S

Description	Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 93362

2

Revision: 31-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

GA300TD60S

Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge"

(Standard Speed IGBT), 300 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Collector to emitter breakdown voltage

VBR(CES)

VGE = 0 V, IC = 500 μA

600

-

V

Collector to emitter voltage

VCE(on)

VGE = 15 V, IC = 150 A

-

1.04

1.15

VGE = 15 V, IC = 300 A

-

1.24

1.45

VGE = 15 V, IC = 150 A, TJ = 125 °C

-

0.96

1.06

VGE = 15 V, IC = 300 A, TJ = 125 °C

-

1.22

1.42

Gate threshold voltage

VGE(th)

VCE = VGE, IC = 250 μA

2.9

4.8

6.3

Collector to emitter leakage current

ICES

VGE = 0 V, VCE = 600 V

-

0.02

0.75

mA

VGE = 0 V, VCE = 600 V, TJ = 125 °C

-

1.5

10

Diode forward voltage drop

VFM

IFM = 150 A

-

1.23

1.39

V

IFM = 300 A

-

1.48

1.75

IFM = 150 A, TJ = 125 °C

-

1.17

1.33

IFM = 300 A, TJ = 125 °C

-

1.50

1.77

Gate to emitter leakage current

IGES

VGE = ± 20 V

-

± 200

nA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Turn-on switching loss

Eon

IC = 300 A, VCC = 360 V, VGE = 15 V,

Rg = 1.5 , L = 500 μH, TJ = 25 °C

-9-

mJ

Turn-off switching loss

Eoff

-90-

Total switching loss

Etot

-99-

Turn-on switching loss

Eon

IC = 300 A, VCC = 360 V, VGE = 15 V,

Rg = 1.5 , L = 500 μH, TJ = 125 °C

-23-

Turn-off switching loss

Eoff

-

133

-

Total switching loss

Etot

-

156

-

Turn-on delay time

td(on)

-

442

-

ns

Rise time

tr

-

301

-

Turn-off delay time

td(off)

-

406

-

Fall time

tf

-

1570

-

Reverse bias safe operating area

RBSOA

TJ = 150 °C, IC = 800 A, VCC = 400 V

VP = 600 V, Rg = 22 VGE = 15 V to 0 V,

L = 500 μH

Fullsquare

Diode reverse recovery time

trr

IF = 300 A, dIF/dt = 500 A/μs,

VCC = 400 V, TJ = 25 °C

-

150

179

ns

Diode peak reverse current

Irr

-43

59

A

Diode recovery charge

Qrr

-3.9

6.3

μC

Diode reverse recovery time

trr

IF = 300 A, dIF/dt = 500 A/μs,

VCC = 400 V, TJ = 125 °C

-

236

265

ns

Diode peak reverse current

Irr

-64

80

A

Diode recovery charge

Qrr

-

8.6

11.1

μC

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