Document Number: 93912

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Revision: 03-Aug-10

1

Three Phase Inverter Module in MTP Package

GB05XP120KTPbF

Vishay Semiconductors

FEATURES

• Generation 5 NPT 1200 V IGBT technology

diode

with

ultrasoft

reverse

recovery

• Very low conduction and switching losses

• Optional SMT thermistor (NTC)

• Aluminum oxide DBC

• Very low stray inductance design for high speed operation

• Short circuit 10 μs

• Square RBSOA

• Operating frequencies 8 kHz to 60 kHz

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Optimized for inverter motor drive applications

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

PRODUCT SUMMARY

1200 V

2.90 V

5 A

> 10 μs

MTP

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Collector to emitter voltage

1200

V

Continuous collector current

12

A

5

Pulsed collector current

24

Peak switching current

24

Diode continuous forward current

5

Peak diode forward current

12

Gate to emitter voltage

± 20

V

RMS isolation voltage

Any terminal to case, t = 1 min

2500

Maximum power dissipation

(including diode and IGBT)

76

W

31