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BDY25 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY25 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDY25 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 140 V V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A B 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.25A B 1.2 V ICES Collector Cutoff Current VCE= 180V; VBE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 140V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 1.0 mA hFE DC Current Gain IC= 2A; VCE= 4V 15 100 fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 15V; f=10MHz 10 MHz Switching Times ton Turn-On Time IC= 5A; IB= 1A B 0.5 μs toff Turn-Off Time IC= 5A; IB1= 1A; IB2= -0.5A 2.0 μs hFE Classifications A B C 15-45 30-90 75-100 isc Website:www.iscsemi.cn 2 |
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