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BDY47 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY47 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY47 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 350 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 750 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 5A 2.0 V ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 750V; IE= 0, TC=150℃ 0.2 2.5 mA hFE-1 DC Current Gain IC= 2A; VCE= 2V 20 hFE-2 DC Current Gain IC= 10A; VCE= 2V 5 fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V 10 MHz Switching times ton Turn-on Time 0.5 μs tf Fall Time 1.0 μs toff Turn-off Time IC= 5A; IB1= -IB2= 1A 3.5 μs isc Website:www.iscsemi.cn 2 |
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