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BDY73 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY73 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDY73 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 60 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= 100Ω 70 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V 90 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.1 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.8 V ICEO Collector Cutoff Current VCE= 30V; IB=0 B 0.7 mA ICEX Collector Cutoff Current VCE= 100V; VBE(off)= 1.5V VCE= 100V; VBE(off)= 1.5V,TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 5.0 mA hFE DC Current Gain IC= 4A; VCE= 4V 50 150 Is/b Second Breakdown Collector Current with Base Forward Biased VCE= 60V, t= 1.0s, Nonrepetitive 1.95 A fT Current Gain-Bandwidth Product IC= 1A; VCE= 4V 0.8 MHz isc Website:www.iscsemi.cn 2 |
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