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BDY80 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY80 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY80 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 35 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10mA; IE= 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.05A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V 0.9 V ICEO Collector Cutoff Current VCE= 20V; IB= 0 B 10 mA ICBO Collector Cutoff Current VCB= 20V; IE= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 40 240 hFE-2 DC Current Gain IC= 1A; VCE= 5V 20 fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V 1 MHz hFE-1 Classifications A B C 40-80 70-140 120-240 isc Website:www.iscsemi.cn 2 |
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