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BU536 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU536 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU536 DESCRIPTION ・With TO-3 package ・High voltage ・Fast switching speed APPLICATIONS ・For color TV horizontal deflection circuits. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 480 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak tp<5ms 15 A PT Total power dissipation TC=25℃ 62 W Tj Junction temperature 175 ℃ Tstg Storage temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.0 ℃/W Fig.1 simplified outline (TO-3) and symbol |
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