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SFT1350 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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SFT1350 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page SFT1350 No. A1874-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --40 V Zero-Gate Voltage Drain Current IDSS VDS=--40V, VGS=0V --1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.7 --2.6 V Forward Transfer Admittance | yfs | VDS=--10V, ID=--9.5A 8.7 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=--9.5A, VGS=--10V 45 59 mΩ RDS(on)2 ID=--5A, VGS=--4.5V 73 105 mΩ Input Capacitance Ciss VDS=--20V, f=1MHz 590 pF Output Capacitance Coss VDS=--20V, f=1MHz 85 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 61 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns Rise Time tr See specified Test Circuit. 40 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 52 ns Fall Time tf See specified Test Circuit. 44 ns Total Gate Charge Qg VDS=--20V, VGS=--10V, ID=--19A 12 nC Gate-to-Source Charge Qgs VDS=--20V, VGS=--10V, ID=--19A 3.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=--20V, VGS=--10V, ID=--19A 2.0 nC Diode Forward Voltage VSD IS=--19A, VGS=0V --1.03 --1.2 V Switching Time Test Circuit PW=10μs D.C.≤1% P.G 50Ω G S D ID= --9.5A RL=2.1Ω VDD= --20V VOUT VIN 0V --10V VIN SFT1350 ID -- VDS ID -- VGS Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V IT16056 0 0 --12 --10 --14 --20 --18 --16 --0.8 --0.6 --2.0 --0.4 --0.2 --1.8 --1.2 --1.0 --1.6 --1.4 --8 --6 --4 --2 --4.5V VGS= --3.5V --4.0V Tc=25 °C IT16108 0 --20 --15 --25 --30 --10 --5 0--7 --6 --5 --1 --3 --2 --4 VDS= --10V |
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