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GSOT08C-V-G-08 Datasheet(PDF) 3 Page - Vishay Siliconix |
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GSOT08C-V-G-08 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 12 page Document Number: 85824 For technical questions, contact: ESDprotection@vishay.com www.vishay.com Rev. 2.0, 22-Jul-10 3 GSOT03C to GSOT36C Two-Line ESD-Protection in SOT-23 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS GSOT05C PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 30 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 30 A Peak pulse power Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 480 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 612 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV Operating temperature Junction temperature TJ - 40 to + 125 °C Storage temperature TSTG - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS GSOT08C PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 18 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 18 A Peak pulse power Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 345 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 400 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV Operating temperature Junction temperature TJ - 40 to + 125 °C Storage temperature TSTG - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS GSOT12C PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 12 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 12 A Peak pulse power Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 312 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 337 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV Operating temperature Junction temperature TJ - 40 to + 125 °C Storage temperature TSTG - 55 to + 150 °C |
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