Document Number: 93474

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Revision: 31-Mar-11

1

This document is subject to change without notice.

VS-HFA08SD60S-M3

Vishay Semiconductors

FEATURES

• Ultrafast recovery time

• Ultrasoft recovery

• Guaranteed avalanche

• Specified at operating conditions

• Compliant to RoHS Directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21

definition

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

These diodes are optimized to reduce losses and EMI/RFI in

high frequency power conditioning systems. The softness of

the recovery eliminates the need for a snubber in most

applications.

These

devices

are

ideally

suited

for

freewheeling, flyback, power converters, motor drives, and

other applications where high speed and reduced switching

losses are design requirements.

PRODUCT SUMMARY

Package

D-PAK (TO-252AA)

8 A

600 V

1.7 V

18 ns

150 °C

Diode variation

Single die

Anode

1

3

2, 4

N/C

D-PAK (TO-252AA)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

600

V

Maximum continuous forward current

8

A

Single pulse forward current

60

Peak repetitive forward current

24

Maximum power dissipation

14

W

Operating junction and storage temperature range

- 55 to + 150

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

600

-

-

V

Forward voltage

See fig. 1

-1.4

1.7

-

1.7

2.1

-

1.4

1.7

Maximum reverse

leakage current

-

0.3

5.0

μA

-

100

500

Junction capacitance

See fig. 3

-

10

25

pF

Series inductance

Measured lead to lead 5 mm from package body

-

8.0

-

nH