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HFA08TB120STRLPBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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HFA08TB120STRLPBF Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page  www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94046 2 Revision: 22-Feb-10 VS-HFA08TB120SPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 8 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage VBR IR = 100 μA 1200 - - V Maximum forward voltage VFM IF = 8.0 A - 2.6 3.3 IF = 16 A - 3.4 4.3 IF = 8.0 A, TJ = 125 °C - 2.4 3.1 Maximum reverse leakage current IRM VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated -0.31 10 μA - 135 1000 Junction capacitance CT VR = 200 V - 11 20 pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 28 - ns trr1 TJ = 25 °C IF = 8.0 A dIF/dt = 200 A/μs VR = 200 V -63 95 trr2 TJ = 125 °C - 106 160 Peak recovery current IRRM1 TJ = 25 °C - 4.5 8.0 A IRRM2 TJ = 125 °C - 6.2 11 Reverse recovery charge Qrr1 TJ = 25 °C - 140 380 nC Qrr2 TJ = 125 °C - 335 880 Peak rate of fall of recovery current during tb dI(rec)M/dt1 TJ = 25 °C - 133 - A/μs dI(rec)M/dt2 TJ = 125 °C - 85 - THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature Tlead 0.063" from case (1.6 mm) for 10 s - - 300 °C Thermal resistance, junction to case RthJC -- 1.7 K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Weight -2.0 - g -0.07 - oz. Marking device Case style D2PAK HFA08TB120S |
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