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HFA25TB60PBF Datasheet(PDF) 1 Page - Vishay Siliconix

Part # HFA25TB60PBF
Description  HEXFRED Ultrafast Soft Recovery Diode, 25 A
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

HFA25TB60PBF Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 94065
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 24-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED®
Ultrafast Soft Recovery Diode, 25 A
VS-HFA25TB60PbF
Vishay Semiconductors
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA25TB60PbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60PbF is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package
TO-220AC
IF(AV)
25 A
VR
600 V
VF at IF
1.7 V
trr (typ.)
23 ns
TJ max.
150 °C
Diode variation
Single die
TO-220AC
Anode
1
3
Cathode
Base
cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
600
V
Maximum continuous forward current
IF
TC = 100 °C
25
A
Single pulse forward current
IFSM
225
Maximum repetitive forward current
IFRM
100
Maximum power dissipation
PD
TC = 25 °C
125
W
TC = 100 °C
50
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C


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