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HFA25TB60PBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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HFA25TB60PBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 94065 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 24-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 HEXFRED® Ultrafast Soft Recovery Diode, 25 A VS-HFA25TB60PbF Vishay Semiconductors FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION VS-HFA25TB60PbF is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 25 A continuous current, the VS-HFA25TB60PbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA25TB60PbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY Package TO-220AC IF(AV) 25 A VR 600 V VF at IF 1.7 V trr (typ.) 23 ns TJ max. 150 °C Diode variation Single die TO-220AC Anode 1 3 Cathode Base cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage VR 600 V Maximum continuous forward current IF TC = 100 °C 25 A Single pulse forward current IFSM 225 Maximum repetitive forward current IFRM 100 Maximum power dissipation PD TC = 25 °C 125 W TC = 100 °C 50 Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C |
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