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BUV27A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUV27A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV27A DESCRIPTION ・ ・With TO-220C package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 12 A ICM Collector current (peak) 20 A IB Base current 4 A IBM Base current (peak) 6 A Ptot Total power dissipation TC=25℃ 85 W Tj Max.operating junction temperature 175 ℃ Tstg Storage temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-case Thermal resistance junction case 1.76 ℃/W |
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