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SIHFR010 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHFR010 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91420 2 S10-1510-Rev. A, 19-Jul-10 IRFR010, SiHFR010 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/W Case-to-Sink RthCS -1.7 - Maximum Junction-to-Case (Drain) RthJC -- 5.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 50 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 500 nA Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V - - 250 μA VDS = 40 V, VGS = 0 V, TJ = 125 °C - - 1000 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4.6 Ab - 0.16 0.20 Forward Transconductance gfs VDS 50 V, ID = 3.6 A 2.1 3.1 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 10 - 250 - pF Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss -29 - Total Gate Charge Qg VGS = 10 V ID = 7.3 A, VDS = 40 V, see fig. 6 and 13b -6.7 10 nC Gate-Source Charge Qgs -1.8 2.6 Gate-Drain Charge Qgd -3.2 4.8 Turn-On Delay Time td(on) VDD = 25 V, ID = 7.3 A, Rg = 24 , RD = 3.3 , see fig. 10b -11 17 ns Rise Time tr -33 50 Turn-Off Delay Time td(off) -12 18 Fall Time tf -23 35 Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contactc -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 8.2 A Pulsed Diode Forward Currenta ISM -- 33 Body Diode Voltage VSD TJ = 25 °C, IS = 8.2 A, VGS = 0 Vb -- 1.6 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 7.3 A, dI/dt = 100 A/μsb 41 86 190 ns Body Diode Reverse Recovery Charge Qrr 0.15 0.33 0.78 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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