Q62702-A1239 datasheet(2/3 Pages) SIEMENS

Part #	Q62702-A1239

Description	Silicon Switching Diode Preliminary data (For high-speed switching applications)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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BAS 16-02W

Semiconductor Group

Jul-24-1998

2

Electrical Characteristics at

TA = 25°C, unless otherwise specified.

Parameter

Symbol

Unit

Values

min.

max.

typ.

DC characteristics

-

V

Breakdown voltage

I(BR) = 100 µA

75

V(BR)

-

715

855

1000

1250

mV

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

-

VF

-

1

µA

-

Reverse current

VR = 70 V

-

IR

30

50

Reverse current

VR = 25 V, TA = 150 °C

VR = 75 V, TA = 150 °C

IR

nA

-

1.75

Vfr

Forward recovery voltage

IF = 10 mA, tp = 20 ns

V

-

AC characteristics

2

pF

CD

-

Diode capacitance

VR = 0 V, f = 20 MHz

-

ns

trr

-

Reverse recovery time

IF = 10 mA, IR = 10 mA, RL = 100 Ω,

measured at

IR = 1mA

6

Test circuit for reverse recovery time

EHN00016

Ι

F

D.U.T.

Oscillograph

Pulse generator:

tp = 100ns, D = 0.05,

tr = 0.6ns, Ri = 50Ω

Oscillograph:

R = 50

Ω, t

r = 0.35ns,

C

≤ 1pF

Semiconductor Group

2

1998-11-01

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