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BAS170W Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BAS170W Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page BAS 170W Semiconductor Group 1 Edition A01, 11.07.94 ESD: Electrostastic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 Package 1) BAS 170W 7 Q62702-A1072 A C SOD-323 Maximum Ratings Parameter Symbol BAS 170W Unit Reverse voltage VR 70 V Forward current IF 70 mA Surge forward current, t ≤ 10 ms IFSM 100 mA Total Power dissipation TS ≤ 97°C Ptot 250 mW Operating temperature range Top -55 +150°C °C Storage temperature range Tstg -55...+150°C °C Thermal Resistance Junction-ambient 1) Rth JA ≤ 320 K/W Junction-soldering point Rth JS ≤ 210 K/W _________________________________ 1) Package mounted on an epoxy pcb 40mm x 40mm x 1.5mm/1cm2 Cu Silicon Schottky Diode l General-purpose diodes for high-speed switching l Circuit protection l Voltage clamping l High-level detecting and mixing l Small package SOD-323 |
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