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MJE4350 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJE4350
Description  Silicon PNP Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE4350 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
MJE4350/4351/4352/4353
DESCRIPTION
・With TO-3PN package
・Respectively complement to type
MJE4340/4341/4342/4343
・DC current gain hFE=8(Min)@IC=16A
APPLICATIONS
・For use in high power audio amplifier and
switching regulator circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
MJE4350
-100
MJE4351
-120
MJE4352
-140
VCBO
Collector-base
voltage
MJE4353
Open emitter
-160
V
MJE4350
-100
MJE4351
-120
MJE4352
-140
VCEO
Collector-emitter
voltage
MJE4353
Open base
-160
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-16
A
ICM
Collector current-peak
-20
A
IB
Base current
-5
A
PC
Collector power dissipation
TC=25℃
125
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
1.0
℃/W
Fig.1 simplified outline (TO-3PN) and symbol


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