MJE15030 datasheet(1/4 Pages) ISC

Part #	MJE15030

Description	Silicon NPN Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE15030

DESCRIPTION

・

・With TO-220C package

・Complement to type MJE15031

・High transition frequency

・DC current gain specified to 4.0 amperes

hFE = 40 (Min) @ IC = 3.0 Adc

hFE = 20 (Min) @ IC = 4.0 Adc

APPLICATIONS

・Designed for use as high–frequency

drivers in audio amplifiers.

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

150

V

VCEO

Collector-emitter voltage

Open base

150

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current (DC)

8

A

ICM

Collector current-Peak

16

A

IB

Base current

2

A

Ta=25℃

2

PD

Total power dissipation

TC=25℃

50

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-C

Thermal resistance ; junction to case

2.5

℃/W

Rth j-A

Thermal resistance , junction to ambient

62.5

℃/W

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