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MJF18002 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJF18002 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJF18002 DESCRIPTION ・ ・With TO-220F package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballast PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 2 A ICM Collector current-Peak 5 A IB Base current 0.5 A IBM Base current-Peak 1.0 A PD Total power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 3.12 ℃/W Rth j-A Thermal resistance junction to ambient 62.5 ℃/W Fig.1 simplified outline (TO-220F) and symbol |
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