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MBRF1090 Datasheet(PDF) 1 Page - Vishay Siliconix |
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MBRF1090 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page MBR(F,B)1090 & MBR(F,B)10100 Vishay General Semiconductor Document Number: 89034 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-220AC, ITO-220AC, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 150 A VF 0.65 V TJ max. 150 °C CASE PIN 2 PIN 1 MBR1090 MBR10100 MBRB1090 MBRB10100 PIN 1 PIN 2 K HEATSINK 1 2 1 2 K MBRF1090 MBRF10100 PIN 2 PIN 1 TO-263AB TO-220AC ITO-220AC TMBS ® 1 2 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090 MBR10100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TC = 133 °C IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 130 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs Isolation voltage (ITO-220AC only) From terminal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C |
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