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MBR2545CT Datasheet(PDF) 1 Page - Vishay Siliconix |
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MBR2545CT Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 88675 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 15-Jun-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Dual Common-Cathode Schottky Rectifier MBR(F,B)2535CT thru MBR(F,B)2560CT Vishay General Semiconductor FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Complant to RoHS 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94 V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC-Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 35 V to 60 V IFSM 150 A VF 0.73 V at 30 A, 0.65 V at 15 A TJ max. 150 °C CASE PIN 2 PIN 1 PIN 3 TO-220AB MBR25xxCT ITO-220AB MBRF25xxCT MBRB25xxCT PIN 1 PIN 2 K HEATSINK 1 2 3 1 2 K TO-263AB PIN 2 PIN 1 PIN 3 1 2 3 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Working peak reverse voltage VRWM 35 45 50 60 Maximum DC blocking voltage VDC 35 45 50 60 Maximum average forward rectified current at TC = 130 °C total device IF(AV) 30 A per diode 15 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Peak repetitive reverse surge current per diode at tp = 2 μs, 1 kHz IRRM 1.0 0.5 Peak non-repetitive reverse energy (8/20 μs waveform) per diode ERSM 25 mJ Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5 k Ω VC 25 kV Voltage rate of change (rated VR) dV/dt 10 000 V/μs |
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