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MFU1206FF01000P100 Datasheet(PDF) 11 Page - Vishay Siliconix

Part # MFU1206FF01000P100
Description  Thin Film Chip Fuses
Download  13 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

MFU1206FF01000P100 Datasheet(HTML) 11 Page - Vishay Siliconix

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Document Number: 28747
For technical questions, contact: thinfilm.chipfuse@vishay.com
www.vishay.com
Revision: 06-May-10
11
MFU Series
Thin Film Chip Fuses
Vishay Beyschlag
TEST AND REQUIREMENTS
All tests are carried out in accordance with the following
specifications:
IEC 60127-1, Miniature fuse - Part 1: Definitions for miniature
fuses and general requirements for miniature fuse-links
IEC 60127-4, Universal Modular Fuse Links (UMF)
UL 248-1, Low voltage fuses - Part 1: General requirements
UL 248-14, Low voltage fuses - Part 14: Supplemental fuses
For the full test schedule refer to the documents listed above.
The testing also covers most of the requirements specified
by METI and CCC.
The tests are carried out in accordance with IEC 60068 and
under standard atmospheric conditions in accordance with
IEC 60068-1, 5.3. Climatic category LCT/UCT/56 (rated
temperature range: Lower category temperature, upper
category temperature; damp heat, long term, 56 days) is
valid.
Unless otherwise specified the following values apply:
Temperature: 15 °C to 35 °C
Relative humidity: 45 % to 75 %
Air pressure: 86 kPa to 106 kPa (860 mbar to 1060 mbar).
The components are mounted for testing on printed-circuit
boards in accordance with IEC 60127-4, unless otherwise
specified.
The requirements stated in the Test Procedures and
Requirements table are based on the required tests and
permitted
limits
of
IEC
60127-1
and
IEC
60127-4
respectively. However, some additional tests and a number
of improvements against those minimum requirements have
been included.
TEST PROCEDURES AND REQUIREMENTS
IEC
60127-4
CLAUSE
IEC
60068-2
TEST
METHOD
TEST
PROCEDURE
REQUIREMENTS
PERMISSIBLE CHANGE
8.3.2
21 (Ue1)
Substrate
bending
Depth 1 mm;
rate 1 mm/s
1 times
No visible damage
ΔR/R ≤ ± 10 %
8.6.2
58 (Td)
Solderability
Solder bath method; SnPb40;
non-activated flux;
(215 ± 3) °C; (3 ± 0.3) s
Good tinning (
≥ 95 % covered);
no visible damage
Solder bath method; SnAg3Cu0.5 or SnAg3.5;
non-activated flux;
(245 ± 3) °C; (2 ± 0.2) s
Good tinning (
≥ 95 % covered);
no visible damage
8.7.2
58 (Td)
Resistance to
soldering heat
Solder bath method;
(260 ± 5) °C; (10 ± 1) s
No visible damage
ΔR/R ≤ ± 10 %
Reflow method 2
(IR/forced gas convection);
(260 ± 5) °C; (10 ± 1) s
No visible damage
ΔR/R ≤ ± 10 %
9.2.1
-
Time/current
characteristics
at nominal
temperature
Cold resistance at 0.1 x
IR;
destructive testing under
overcurrent conditions
(DC-Current)
MFU 0402
IR
≤ 0.75 A
At 1.25 x
IR, tpre-arc > 1 h
at 2.0 x
IR, tpre-arc < 60 s
at 10 x
IR, tpre-arc < 0.001 s
MFU 0402
0.8 A
≤ IR ≤ 3.15 A
At 1.25 x
IR, tpre-arc > 1 h
at 2.0 x
IR, tpre-arc < 5 s
at 10 x
IR, tpre-arc < 0.001 s
MFU 0603
IR
≤ 5.0 A
MFU 0805
IR
≤ 5.0 A
MFU 1206
IR
≤ 6.3 A
9.3.2
-
Breaking
capacity
50 A at rated voltage
acc. to UL 248-14
Optical inspection with naked eye
no visible damage
9.3.3
-
Residual
resistance
50 A at rated voltage
acc. to UL 248-14
Insulation resistance
at 2.0 x
UR (DC)
higher than 0.1 M
Ω


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