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S5MS Datasheet(PDF) 1 Page - Vishay Siliconix |
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S5MS Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Document Number: 89148 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 02-Nov-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 SMD Photovoltaic Solar Cell Protection Rectifier S5MS Vishay General Semiconductor New Product FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in solar cell panel blocking diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end Notes (1) Mounted on 30 mm x 30 mm Al P.C.B. (2) Free air, mounted on recommended copper pad area (3) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test PRIMARY CHARACTERISTICS IF(AV) 5.0 A VRRM 1000 V IFSM 100 A IR 10 μA VF at IF = 5.0 A 0.90 V TJ max. 150 °C DO-214AB (SMC) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL S5MS UNIT Device marking code 5MS Maximum repetitive peak reverse voltage VRRM 1000 V Maximum DC forward current (fig. 1) TM = 110 °C IF 5.0 (1) A TA = 25 °C 1.6 (2) Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 100 A Operating junction and storage temperature range TOP, TSTG - 55 to + 150 °C Junction temperature in DC forward current without reverse bias, t ≤ 1 h (3) TJ ≤ 200 °C |
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