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S5MS Datasheet(PDF) 1 Page - Vishay Siliconix

Part # S5MS
Description  SMD Photovoltaic Solar Cell Protection Rectifier
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

S5MS Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 89148
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 02-Nov-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
SMD Photovoltaic Solar Cell Protection Rectifier
S5MS
Vishay General Semiconductor
New Product
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in solar cell panel blocking diode for protection,
using DC forward current without reverse bias.
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
Notes
(1) Mounted on 30 mm x 30 mm Al P.C.B.
(2) Free air, mounted on recommended copper pad area
(3) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
1000 V
IFSM
100 A
IR
10 μA
VF at IF = 5.0 A
0.90 V
TJ max.
150 °C
DO-214AB (SMC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S5MS
UNIT
Device marking code
5MS
Maximum repetitive peak reverse voltage
VRRM
1000
V
Maximum DC forward current (fig. 1)
TM = 110 °C
IF
5.0 (1)
A
TA = 25 °C
1.6 (2)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Operating junction and storage temperature range
TOP, TSTG
- 55 to + 150
°C
Junction temperature in DC forward current without
reverse bias, t
≤ 1 h (3)
TJ
≤ 200
°C


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