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SI1926DL Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI1926DL Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 11 page Vishay Siliconix Si1926DL Document Number: 73684 S10-0792-Rev. D, 05-Apr-10 www.vishay.com 1 Dual N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) 60 1.4 at VGS = 10 V 0.37 0.47 3.0 at VGS = 4.5 V 0.25 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 400 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 0.37 A TC = 70 °C 0.30 TA = 25 °C 0.34b, c TA = 70 °C 0.27b, c Pulsed Drain Current IDM 0.65 Continuous Source-Drain Diode Current TC = 25 °C IS 0.43 TA = 25 °C 0.25b, c Maximum Power Dissipation TC = 25 °C PD 0.51 W TC = 70 °C 0.33 TA = 25 °C 0.30b, c TA = 70 °C 0.20b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 360 415 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 300 350 Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free) Si1926DL-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code PD XX Lot Traceability and Date Code Part # Code SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View S1 G1 D2 D1 G2 S2 N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition •TrenchFET® Power MOSFET • 100 % Rg Tested • ESD Protected: 1800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Low Power Load Switch |
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