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SI2318CDS Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI2318CDS Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 67030 S10-2250-Rev. A, 04-Oct-10 www.vishay.com 3 Vishay Siliconix Si2318CDS New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 VGS =10 V thru 4V VGS =3V V DS - Drain-to-Source Voltage (V) 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 VGS =4.5 V VGS =10V I D - Drain Current (A) 0 2 4 6 8 10 0123 456 ID =4.3 A VDS =20V VDS =10V VDS =32V Q g - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0.0 0.6 1.2 1.8 2.4 3.0 TC = 125 °C TC = 25 °C TC = - 55 °C V GS - Gate-to-Source Voltage (V) Crss 0 90 180 270 360 450 0 5 10 15 20 Ciss Coss V DS - Drain-to-Source Voltage (V) 0.65 0.85 1.05 1.25 1.45 1.65 - 50 - 25 0 25 50 75 100 125 150 VGS =4.5 V; ID =3.9 A VGS =10V; ID =4.3 A T J - Junction Temperature (°C) |
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