SI2329DS datasheet(3/4 Pages) VISHAY

Part #	SI2329DS

Description	P-Channel 8 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 63225

www.vishay.com

S11-1274-Rev. A, 04-Jul-11

3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPICE Device Model Si2329DS

Vishay Siliconix

COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted)

Note

• Dots and squares represent measured data.

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

ID - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

VSD - Source-to-Drain Voltage (V)

0

5

10

15

20

0.0

0.5

1.0

1.5

2.0

VGS = 1.5 V

VGS = 1 V

VGS = 5 V, 3 V, 2.5 V, 2 V

0

1

2

3

4

5

0.0

0.3

0.6

0.9

1.2

1.5

TJ = 25 °C

TJ = - 55 °C

TJ = 125 °C

0.015

0.030

0.045

0.060

0.075

0.090

0

5

10

15

20

VGS = 4.5 V

VGS = 2.5 V

0

700

1400

2100

2800

02468

Ciss

Coss

Crss

0

1

2

3

4

5

0

5

10

15

20

VDS = 4 V

ID = 5.3 A

0.1

1

10

00.2

0.4

0.6

0.8

1

TJ = 150 °C

TJ = 25 °C

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