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Document Number: 67509

S11-0612-Rev. A, 04-Apr-11

Vishay Siliconix

Si2366DS

New Product

This document is subject to change without notice.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

T

T

0.8

1.1

1.4

1.7

2

- 50

- 25

0

25

50

75

100

125

150

T

I

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0

0.02

0.04

0.06

0.08

0.1

2468

10

V

T

T

I

0

8

16

24

32

0.001

0.01

0.1

1

10

100

Time (s)

Safe Operating Area, Junction-to-Ambient

0.01

0.1

1

10

100

0.1

1

10

100

V

* V

100 ms

Limited by R

1 ms

T

Single Pulse

BVDSS Limited

10 ms

100 μs

1 s

DC