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SI3464DV-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI3464DV-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 11 page www.vishay.com 4 Document Number: 65712 S10-0218-Rev. A, 25-Jan-10 Vishay Siliconix Si3464DV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 0.1 0.3 0.5 0.7 0.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.01 0.02 0.03 0.04 0.05 024 6 8 ID =7.5 A TJ = 25 °C TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 9 18 27 36 45 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 Single Pulse 100 ms Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms 1s, 10s DC VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified |
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