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SI3552DV Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI3552DV Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 12 page  Vishay Siliconix Si3552DV Document Number: 70971 S09-2110-Rev. C, 12-Oct-09 www.vishay.com 1 N- and P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET •100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) N-Channel 30 0.105 at VGS = 10 V 2.5 0.175 at VGS = 4.5 V 2.0 P-Channel - 30 0.200 at VGS = - 10 V - 1.8 0.360 at VGS = - 4.5 V - 1.2 TSOP-6 Top View 6 4 1 2 3 5 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 Ordering Information: Si3552DV -T1-E3 (Lead (Pb)-free) Si3552DV-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 G1 S1 N-Channel MOSFET S2 G2 D2 P-Channel MOSFET Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 - 30 V Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C) a, b TA = 25 °C ID 2.5 - 1.8 A TA = 70 °C 2.0 - 1.2 Pulsed Drain Current IDM 8- 7 Continuous Source Current (Diode Conduction)a, b IS 1.05 - 1.05 Maximum Power Dissipationa, b TA = 25 °C PD 1.15 W TA = 70 °C 0.73 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 93 110 °C/W Steady State 130 150 Maximum Junction-to-Lead Steady State RthJL 75 90 |
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