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SI3585CDV-T1-GE3 Datasheet(PDF) 6 Page - Vishay Siliconix |
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SI3585CDV-T1-GE3 Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 16 page www.vishay.com 6 Document Number: 67470 S11-0613-Rev. A, 04-Apr-11 Vishay Siliconix Si3585CDV This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 1 2 3 4 5 0 25 50 75 100 125 150 T C - Case Temperature (°C) Package Limited Power, Junction-to-Foot 0 0.5 1 1.5 025 50 75 100 125 150 T C - Case Temperature (°C) Power, Junction-to-Ambient 0.0 0.2 0.4 0.6 0.8 1.0 0 255075 100 125 150 T A - Ambient Temperature (°C) |
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