SI3586DV-T1-E3 datasheet(6/13 Pages) VISHAY

Part #	SI3586DV-T1-E3

Description	N- and P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 72310

S09-2110-Rev. D, 12-Oct-09

Vishay Siliconix

Si3586DV

P-CHANNEL TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

1

2

3

4

5

6

7

8

0

1234

5

VDS - Drain-to-Source Voltage (V)

VGS = 5 V thru 2.5 V

2 V

1.5 V

0.00

0.15

0.30

0.45

0.60

0.75

012

34

56

78

ID - Drain Current (A)

VGS = 1.8 V

VGS = 4.5 V

VGS = 2.5 V

0.0

1.3

2.6

3.9

5.2

6.5

0

123

456

Qg - Total Gate Charge (nC)

VDS = 10 V

ID = 2.5 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

6

7

8

0.0

0.5

1.0

1.5

2.0

2.5

VGS - Gate-to-Source Voltage (V)

TC = - 55 °C

125 °C

25 °C

0

130

260

390

520

650

04

8

12

16

20

VDS - Drain-to-Source Voltage (V)

Coss

Ciss

Crss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 4.5 V

ID = 2.5 A

TJ - Junction Temperature (°C)

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SI3586DV-T1-E3 Datasheet(PDF) 6 Page - Vishay Siliconix

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