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SI4202DY-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI4202DY-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 67092 S10-2602-Rev. A, 15-Nov-10 Vishay Siliconix Si4202DY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C V SD - Source-to-Drain Voltage (V) - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID =5mA ID = 250 μA T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.012 0.024 0.036 0.048 0.060 012 345 67 89 10 TJ =25 °C TJ = 125 °C ID =8A V GS - Gate-to-Source Voltage (V) Time (s) 0 5 10 15 20 25 30 0.01 1 100 Safe Operating Area 0.01 100 1 100 0.01 0.1 10 ms 0.1 1 10 10 TA = 25 °C Single Pulse 1ms BVDSS Limited 1s 10 s 100 ms Limited by RDS(on)* V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified DC |
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