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SI4340DDY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4340DDY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 15 page www.vishay.com 2 Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 Vishay Siliconix Si4340DDY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA Ch-1 20 V VGS = 0 V, ID = 250 µA Ch-2 20 VDS Temperature Coefficient VDS/TJ ID = 250 µA Ch-1 20 mV/°C ID = 25 mA Ch-2 22 VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA Ch-1 - 4.4 ID = 25 mA Ch-2 - 4.6 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Ch-1 1 2.5 V VDS = VGS, ID = 250 µA Ch-2 1 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Ch-1 100 nA VDS = 0 V, VGS = ± 20 V Ch-2 100 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V Ch-1 1 µA VDS = 20 V, VGS = 0 V Ch-2 100 VDS = 20 V, VGS = 0 V, TJ = 85 °C Ch-1 15 VDS = 20 V, VGS = 0 V, TJ = 85 °C Ch-2 10 000 On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V Ch-1 20 A VDS 5 V, VGS = 10 V Ch-2 30 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 11.5 A Ch-1 0.0065 0.0085 VGS = 10 V, ID = 15.2 A Ch-2 0.0060 0.0070 VGS = 4.5 V, ID = 10 A Ch-1 0.0091 0.0115 VGS = 4.5 V, ID = 14 A Ch-2 0.0077 0.0095 Forward Transconductanceb gfs VDS = 10 V, ID = 11.5 A Ch-1 28 S VDS = 10 V, ID = 15.2 A Ch-2 44 Dynamica Input Capacitance Ciss Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz Ch-1 862 pF Ch-2 956 Output Capacitance Coss Ch-1 280 Ch-2 363 Reverse Transfer Capacitance Crss Ch-1 116 Ch-2 120 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 12 A Ch-1 17.4 26 nC VDS = 10 V, VGS = 10 V, ID = 12 A Ch-2 17.8 27 Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 12 A Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 12 A Ch-1 8.1 12.5 Ch-2 8.4 12.5 Gate-Source Charge Qgs Ch-1 2.2 Ch-2 2.6 Gate-Drain Charge Qgd Ch-1 2.4 Ch-2 2.5 Gate Resistance Rg f = 1 MHz Ch-1 2.2 4.4 Ch-2 2.6 5.2 |
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