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SI4464DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4464DY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si4464DY SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.9 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 26 A VGS = 10 V, ID = 2.2 A 0.192 0.195 Drain-Source On-State Resistance a rDS(on) VGS = 6 V, ID = 2.1 A 0.199 0.210 Ω Forward Transconductance a gfs VDS = 15 V, ID = 2.2 A 6.1 8 S Diode Forward Voltage a VSD IS = 2.1 A, VGS = 0 V 0.74 0.8 V Dynamic b Total Gate Charge Qg 13 12 Gate-Source Charge Qgs 2.5 2.5 Gate-Drain Charge Qgd VDS = 100 V, VGS = 10 V, ID = 2.2 A 3.8 3.8 nC Turn-On Delay Time td(on) 14 10 Rise Time tr 12 12 Turn-Off Delay Time td(off) 8 15 Fall Time tf VDD = 100 V, RL = 100 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 10 15 Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 A/µs 53 60 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72172 S-51095 Rev. B, 13-Jun-05 |
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